esja02 - 0 4 s 20 m a 4 .0 kv 100 ns subminiature high voltage diodes gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 81 84 9628 fax:0086 - 20 - 8184 9638 2016 1 / 1 maximum ratings and characteristics : ( absolute maximum ratings ) items symbols condition data v alue units repetitive peak renerse voltage v rrm ta= 2 5c ; 4 .0 kv average output current i f ta= 55 c ; resistive load 20 m a suege current i fsm ta=25c ; 1/2 sine(60hz) 3.0 a junction temperature t j - 40 ~ + 1 25 c allowable operation case temperature tc 125 c storage temperature t stg - 40 ~ + 1 25 c electrical characteristics: ta=25c ( unless otherwise specified ) items symbols condition data value units maximum forward voltage drop v f at 25c ; at 1/2 i f (av) 10 v maximum reverse current i r 1 at 25c ; at v rrm 2.0 ua i r 2 at 100c ; at v rrm 10 ua maximum reverse recovery time t rr a t 25c ; i f = 0.5i r ; i r = i favm ; i rr = 0. 25 i r 100 ns junction capacitance c j at 25c ; v r =0v ; f=1mhz -- pf hvgt h igh voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. shape display: s ize: (unit:mm) hvgt name : do - 20 3 f eatures: 1. high reliability design . 2. high voltage design . 3. h igh frequency . 4. conform to rohs . 5. epoxy resin molded in vacuumhave anticorrosion in the surface . a pplications: 1. h igh voltage multiplier circuit 2. electrostatic generator circuit . 3. g eneral purpose high voltage rectifier. 4. other . mechanical data: 1. case : epoxy resin molding. 2. terminal: w elding axis . 3. net weight : 0. 12 grams (approx) .
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